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Effect of stress concentration regions on the performance of piezoresistive silicon beams | ||
| Challenges in Nano and Micro Scale Science and Technology | ||
| دوره 12، شماره 2، آذر 2024، صفحه 115-131 اصل مقاله (2.4 M) | ||
| نوع مقاله: Original Research Paper | ||
| شناسه دیجیتال (DOI): 10.22111/cnmst.2025.52964.1267 | ||
| نویسندگان | ||
| Erfan Rezazadeh Kalashami1؛ Reza Ansari1؛ mohammad kazem hassanzadeh aghdam* 2 | ||
| 1Faculty of Mechanical Engineering, University of Guilan | ||
| 2Ph.d candidate- university of guilan | ||
| چکیده | ||
| Piezoresistance, which is the change in resistance due to the applied stress, is a phenomenon that has been recognized in silicon. This study analyzes a micro-electro-mechanical-system (MEMS)-based force sensor that is both flexible and highly sensitive, utilizing a piezoresistive sensing mechanism. The design analysis focuses on enhancing the sensitivity of the microcantilever or beams by integrating various combinations of the stress concentration regions (SCRs). For simulation, four-point bending setup is used specifically for analyzing the piezoresistance effect in p-type silicon. The stress distribution in this setup is niform and aligned with the <110> crystal axis. The primary objective of this study is to investigate the impact of different shapes, distances, rotations, and the number of SCRs on the performance of piezoresistive beam. A finite element approach is employed to analyze different designs for obtaining relative resistance changes. The simulation results are compared with experimental data, demonstrating a good accuracy and it is also identified the appropriate element size for converging answers. As a result, a force sensor has been designed with high sensitivity and flexibility. | ||
| کلیدواژهها | ||
| Piezoresistance؛ Stress concentration region؛ Silicon beam؛ Finite element method؛ Micro-electro-mechanicalsystem | ||
| مراجع | ||
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[1] He Y, Yu A, Liu X, Wang Y. Micro ElectroMechanical Systems (MEMS). In: Handbook of Integrated Circuit Industry. Singapore: Springer Nature Singapore; 2023. p. 895-911.
[2] Skidmore G, Ellis M, Geisberger A, Tsui K, Saini R, Huang T, et al. Parallel assembly of microsystems using Si micro electro mechanical systems. Microelectron Eng. 2003;67:445-52. [3] Vashist SK, Holthöfer H. Microcantilevers for sensing applications. Measurement and Control. 2010;43(3):84-8. [4] Algamili AS, Khir MHM, Dennis JO, Ahmed AY, Alabsi SS, Ba Hashwan SS, et al. A review of actuation and sensing mechanisms in MEMS-based sensor devices. Nanoscale Res Lett. 2021;16:1-21.
[5] Vashist SK. A review of microcantilevers for sensing applications. 2017. doi:10.2240/azojono0115. [6] Lamba M, Mittal N, Singh K, Chaudhary H. Design analysis of polysilicon piezoresistors PDMS microcantilever based MEMS force sensor. Int J Mod Phys B. 2020;34(09):2050072. [7] Binnig G, Quate CF, Gerber C. Atomic force microscope. Phys Rev Lett. 1986;56(9):930. [8] Smith CS. Piezoresistance effect in germanium and silicon. Phys Rev. 1954;94(1):42. [9] Beer FP, Johnston JER. Mechanics of Materials. 2nd ed. New York: McGraw-Hill; 1981. Chapter 8. [10]Firdaus SM, Omar H, Azid IA. High sensitive piezoresistive cantilever MEMS based sensor by introducing stress concentration region (SCR). In: Finite Element Analysis—New Trends and Developments. 2012. p. 225-52. [11]Kassenge S, Zoval JM, Mather E, Sarkar K, Hodko D, Maity S. Design issue in SOI-based high sensitivity piezoresistive cantilever devices. In: SPIE Conference on Smart Structures and Materials; 2002; San Diego, CA. [12]Lund E, Finstad TG. Design and construction of a four-point bending based set-up for measurement of piezoresistance in semiconductors. Rev Sci Instrum. 2004;75(11):4960-6. [13]Richter J, Arnoldus MB, Hansen O, Thomsen EV. Four-point bending setup for characterization of semiconductor piezoresistance. Rev Sci Instrum. 2008;79(4):044703. [14]Weihnacht V, Brückner W, Schneider CM. Apparatus for thin-film stress measurement with integrated fourpoint bending equipment: Performance and results on Cu films. Rev Sci Instrum. 2000;71(12):4479-82. [15]Richter J, Hansen O, Larsen AN, Hansen JL, Eriksen GF, Thomsen EV. Piezoresistance of silicon and strained Si0.9Ge0.1. Sens Actuators A Phys. 2005;123:388-96. [16]Bartholomeyczik J, Brugger S, Ruther P, Paul O. Multidimensional CMOS in-plane stress sensor. IEEE Sens J. 2005;5(5):872-82. [17]Beaty RE, Jaeger RC, Suhling JC, Johnson RW, Butler RD. Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture. IEEE Trans Components Hybrids Manuf Technol. 1992;15(5):904-14. [18]Wahid KAA, Lee HW, Shazni MA, Azid IA. Investigation on the effect of different design of SCR on the change of resistance in piezoresistive micro cantilever. Microsyst Technol. 2014;20:1079-83. [19]Tan TH, Mitchell SJN, McNeill DW, Wadsworth H, Strahan S. A computational approach for simulating P-type silicon piezoresistor using four point bending setup. Simulation. 2013;6:8. [20]Kanda Y. A graphical representation of the piezoresistance coefficients in silicon. IEEE Trans Electron Devices. 1982;29(1):64-70. [21]Wortman JJ, Evans RA. Young's modulus, shear modulus, and Poisson's ratio in silicon and germanium. J Appl Phys. 1965;36(1):153-6. [22]Leu PW, Svizhenko A, Cho K. Ab initio calculations of the mechanical and electronic properties of strained Si nanowires. Phys Rev B. 2008;77(23):235305. [23]Noel JG. Review of the properties of gold material for MEMS membrane applications. IET Circuits Devices Syst. 2016;10(2):156-61. [24]Bhatti M, Lee X, Zhong L, Abdalla A. Design and finite element analysis of piezoresistive cantilever with stress concentration holes. In: ICIEA 2007 - Second IEEE Conference on Industrial Electronics and Applications; 2007. p. 1171-4. [25]Kavitha K, Shanmugaraja P, Shree RB. Design and displacement analysis of three different cantilever based MEMS piezoresistive pressure sensor with polymer (PDMS/PMMA) thin film. Revista GEINTEC. 2021;11(2):1629-40. [26]Ansari MZ, Cho C, Choi W, Lee M, Lee S, Kim J. Improving sensitivity of piezoresistive microcantilever biosensors using stress concentration region designs. J Phys D Appl Phys. 2013;46(50):505501. [27]Dhonkal AK, Agarwal V, Sengar K. Sensitivity of the MEMS based piezoresistive wind speed sensor with comparative study of different shapes of paddles. Int Res J Eng Technol. 2017;4(2):1693-7. [28]Rotake DR, Darji AD. Stiffness and sensitivity analysis of microcantilever based piezoresistive sensor for bio-MEMS application. In: 2018 IEEE Sensors; 2018. p. 1-4. [29]Hawari HF, Wahab Y, Azmi MT, Shakaff AM, Hashim U, Johari S. Design and analysis of various microcantilever shapes for MEMS based sensing. J Phys Conf Ser. 2014;495(1):012045. [30]Liu Q, Gao R, Tam VW, Li W, Xiao J. Strain monitoring for a bending concrete beam using piezoresistive cement-based sensors. Constr Build Mater. 2018;167:338-47. [31]Mondal S, Arya D, Ansari MZ. High sensitive MEMS piezoresistive microcantilever sensor. Procedia Comput Sci. 2018;133:793-8. [32]Naeli K. Optimization of piezoresistive cantilevers for static and dynamic sensing applications [dissertation]. Georgia Institute of Technology; 2009. [33]Tran AV, Zhang X, Zhu B. Mechanical structural design of a piezoresistive pressure sensor for lowpressure measurement: Computational analysis by increases in sensor sensitivity. Sensors. 2018;18(7):2023. | ||
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