| تعداد نشریات | 31 |
| تعداد شمارهها | 834 |
| تعداد مقالات | 8,015 |
| تعداد مشاهده مقاله | 14,855,124 |
| تعداد دریافت فایل اصل مقاله | 9,588,086 |
Monte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes | ||
| International Journal of Communications and Information Technology | ||
| مقاله 5، دوره 1، شماره 1، اسفند 2011، صفحه 21-24 اصل مقاله (698 K) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22111/cit.2011.89 | ||
| نویسندگان | ||
| M. Soroosh1؛ M. A. Mansouri-Birjandi2 | ||
| 1Shahid Chamran University | ||
| 2University of Sistan and Baluchestan | ||
| چکیده | ||
| In this paper, we calculate electron and hole impact ionization coefficients in In0.52Al0.48As using a Monte Carlo model which has two valleys and two bands for electrons and holes respectively. Also, we calculate multiplication factor for electron and hole initiated multiplication regimes and breakdown voltage in In0.52Al0.48As PIN avalanche photodiodes. To validate the model, we compare our simulated results with the experimental results. | ||
| کلیدواژهها | ||
| Impact Ionization؛ Avalanche Photodiode؛ Monte Carlo simulation | ||
|
آمار تعداد مشاهده مقاله: 1,967 تعداد دریافت فایل اصل مقاله: 1,590 |
||